Enhanced synaptic performances in SrIrO3 thin films by a ferroelectric layer

Sensitively Temperature-Dependent Spin Orbit Coupling in SrIrO3 Thin Films

Spin orbit coupling plays a non-perturbation effect in many recently developed novel fields including topological insulators and spin-orbit assistant Mott insulators. In this paper, strongly temperature-dependent spin orbit coupling, revealed by weak anti-localization, is observed at low temperature in 5d strongly correlated compound, SrIrO3. As the temperature rising, increase rate of Rashba c...

Simulation of Ferroelectric Thin Films

The hysteresis properties of ferroelectric thin films open an elegant and promising way to build nonvolatile memory cells. Our basic goal is to set up a tool which is able to reproduce the macroscopic behavior of the devices by calculating current, voltage and charge at the contacts correctly. Our tool, MINIMOS-NT, provides a rigorous approach to describe the static hysteresis properties of fer...

Scaling Of Ferroelectric Properties In Thin Films

A fundamental issue in ferroic systems (ferromagnetic and ferroelectric) is the scaling of the order parameter (magnetization or polarization) with size. Specifically, in ferroelectric thin films, deviations in the polarization can occur due to: (i) competition between thermal vibrations and the correlation energy (which aligns the dipoles); (ii) damage during fabrication. These deviations will...

Ferroelastic domains in bilayered ferroelectric thin films

We investigate theoretically ferroelastic domain fractions in a heteroepitaxial bilayer consisting of 001 tetragonal PbZrxTi1−xO3 and 001 rhombohedral PbZr1−xTixO3 on a thick 001 passive substrate as a function of the lattice misfit strain between layers and the substrate. By considering the self-strain in each layer and the indirect elastic interaction between the layers, we provide a numerica...

Charge Transport in Ferroelectric Thin Films